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NSF060120L4A0Q
Silicon Carbide MOSFET, Single, N Channel, 37 A, 1.2 kV, 0.09 ohm, TO-247
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445 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €14.960 |
| 5+ | €13.020 |
| 10+ | €11.080 |
| 50+ | €10.860 |
| 100+ | €10.640 |
| 250+ | €10.420 |
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€14.96 (ex VAT)
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNSF060120L4A0Q
Order Code4416129
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id37A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.09ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.9V
Power Dissipation183W
Operating Temperature Max175°C
Product Range-
SVHCLead (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
37A
Drain Source On State Resistance
0.09ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
2.9V
Operating Temperature Max
175°C
SVHC
Lead (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
183W
Product Range
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006568
Product traceability