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ManufacturerINFINEON
Manufacturer Part NoIPL60R125C7AUMA1
Order Code2983364RL
Product RangeCoolMOS C7
Also Known AsIPL60R125C7, SP001385066
Technical Datasheet
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Quantity | Price (ex VAT) |
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100+ | €2.290 |
500+ | €1.810 |
1000+ | €1.690 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
€234.00 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPL60R125C7AUMA1
Order Code2983364RL
Product RangeCoolMOS C7
Also Known AsIPL60R125C7, SP001385066
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id17A
Drain Source On State Resistance0.125ohm
Transistor Case StyleVSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation103W
No. of Pins4Pins
Operating Temperature Max150°C
Product RangeCoolMOS C7
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
IPL60R125C7AUMA1 is a 600V CoolMOS™ C7 power transistor. It is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. It combines the experience of the leading SJ MOSFET supplier with high class innovation. Potential applications includes PFC stages and PWM stages (TTF,LLC) for high power/performance SMPS example computing, server, telecom, UPS and solar.
- Suitable for hard and soft switching (PFC and high performance LLC)
- Increased MOSFET dv/dt ruggedness to 120V/ns
- Qualified for industrial grade applications according to JEDEC(J-STD20 and JESD22)
- 4pin kelvin source concept
- Increased economies of scale by use in PFC and PWM topologies in the application
- Higher dv/dt limit enables faster switching leading to higher efficiency
- Enabling higher system efficiency by lower switching glosses
- Optimized PCB assembly and layout solutions
- Suitable for applications such as server, telecom and solar
- PG-VSON-4 package, operating junction temperature range from -40 to 150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
17A
Transistor Case Style
VSON
Rds(on) Test Voltage
10V
Power Dissipation
103W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.125ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
4Pins
Product Range
CoolMOS C7
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001
Product traceability