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Quantity | Price (ex VAT) |
---|---|
1+ | €2.350 |
10+ | €1.990 |
25+ | €1.840 |
50+ | €1.810 |
100+ | €1.770 |
250+ | €1.740 |
500+ | €1.720 |
1000+ | €1.700 |
Product Information
Product Overview
The IR2010SPBF is a high power high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 200V. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- 3.3V Logic compatible
- Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Shut down input turns OFF both channels
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
Applications
Motor Drive & Control
Technical Specifications
2Channels
High Side and Low Side
16Pins
Surface Mount
3A
10V
-40°C
95ns
-
MSL 3 - 168 hours
-
MOSFET
SOIC
Non-Inverting
3A
20V
125°C
65ns
-
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate