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IRLML6402TRPBF
MOSFET Transistor, P Channel, 3.7A, 20V, 65 mohm, 1.3W, SOT-23
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ManufacturerINFINEON
Manufacturer Part NoIRLML6402TRPBF
Order Code9103503
Product RangeHEXFET Series
Also Known AsSP001552740
Technical Datasheet
96.745 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | €0.417 |
| 50+ | €0.244 |
| 250+ | €0.128 |
| 1000+ | €0.107 |
| 3000+ | €0.0854 |
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Multiple: 5
€2.08 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLML6402TRPBF
Order Code9103503
Product RangeHEXFET Series
Also Known AsSP001552740
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.7A
Drain Source On State Resistance0.065ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max550mV
Power Dissipation1.3W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRLML6402PBF is -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications such as battery and load management, portable electronics and PCMCIA cards and printed circuit board where space is at a premium.
- Drain to source voltage (Vds) of -20V
- Gate to source voltage of ±12V
- On resistance Rds(on) of 80mohm at Vgs -2.5V
- Power dissipation Pd of 1.3W at 25°C
- Continuous drain current Id of -3.7A at Vgs -4.5V and 25°C
- Operating junction temperature range from -55°C to 150°C
- 0.01W/°C linear derating factor
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3.7A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
550mV
No. of Pins
3Pins
Product Range
HEXFET Series
MSL
-
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000091
Product traceability