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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDP2532
Order Code1095014
Technical Datasheet
Drain Source Voltage Vds150V
Continuous Drain Current Id79A
Drain Source On State Resistance0.016ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation310W
No. of Pins3Pins
Operating Temperature Max175°C
MSL-
Product Overview
The FDP2532 is a PowerTrench® N-channel MOSFET suitable for synchronous rectification, battery protection circuit, uninterruptible power supplies and micro solar inverter.
- Low miller charge
- Low Qrr body diode
- UIS Capability (single pulse and repetitive pulse)
Applications
Power Management, Consumer Electronics
Technical Specifications
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.016ohm
Rds(on) Test Voltage
10V
Power Dissipation
310W
Operating Temperature Max
175°C
SVHC
Lead (27-Jun-2024)
Continuous Drain Current Id
79A
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.013608
Product traceability