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FQT4N20LTF
Power MOSFET, N Channel, 200 V, 850 mA, 1.1 ohm, SOT-223, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 12 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 4000+ | €0.263 |
Price for:Each (Supplied on Cut Tape)
Minimum: 4000
Multiple: 4000
€1,057.00 (ex VAT)
A €5.00 re-reeling charge will be added for this product
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQT4N20LTF
Order Code2454172RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id850mA
On Resistance Rds(on)1.1ohm
Drain Source On State Resistance1.1ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation2.2W
Power Dissipation Pd2.2W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
The FQT4N20LTF is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low level gate drive requirements allowing direct operation from logic drives
- 100% avalanche tested
- 4nC typical low gate charge
- 6pF typical low Crss
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
1.1ohm
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
2.2W
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
-
SVHC
Lead (27-Jun-2024)
Transistor Polarity
N Channel
Continuous Drain Current Id
850mA
Drain Source On State Resistance
1.1ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
2.2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000816
Product traceability