Print Page
HGTP7N60A4-F102
IGBT, 34 A, 2.7 V, 125 W, 600 V, TO-220, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoHGTP7N60A4-F102
Order Code3615801
Technical Datasheet
Continuous Collector Current34A
Collector Emitter Saturation Voltage2.7V
Power Dissipation125W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
SVHCNo SVHC (15-Jan-2018)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Continuous Collector Current
34A
Power Dissipation
125W
Transistor Case Style
TO-220
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.7V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
SVHC
No SVHC (15-Jan-2018)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1
Product traceability