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HUF75545P3
Power MOSFET, N Channel, 80 V, 75 A, 0.01 ohm, TO-220AB, Through Hole
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €2.990 |
| 10+ | €2.420 |
| 100+ | €1.570 |
| 500+ | €1.290 |
| 1000+ | €1.260 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoHUF75545P3
Order Code1471063
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id75A
Drain Source On State Resistance0.01ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation270W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Product Overview
The HUF75545P3 is an UltraFET N-channel Power MOSFET with ultra-low ON-resistance.
- Peak current vs. pulse width curve
- UIS rating curve
- Simulation models - Temperature compensated PSPICE® & SABER™, thermal impedance SPICE & SABER
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
75A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
270W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.01ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002041
Product traceability