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Product Information
ManufacturerONSEMI
Manufacturer Part NoTIP120G
Order Code2535659
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo60V
Power Dissipation Pd65W
DC Collector Current5A
RF Transistor CaseTO-220
No. of Pins3Pins
DC Current Gain hFE1000hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCLead (27-Jun-2024)
Product Overview
The TIP120G is a NPN Darlington bipolar Power Transistor, designed for general purpose amplifier and low-speed switching applications.
- High DC current gain
- Monolithic construction with built-in base-emitter shunt resistor
Applications
Audio, Industrial
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
65W
RF Transistor Case
TO-220
DC Current Gain hFE
1000hFE
Operating Temperature Max
150°C
Qualification
AEC-Q101
Collector Emitter Voltage V(br)ceo
60V
DC Collector Current
5A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Alternatives for TIP120G
2 Products Found
Associated Products
7 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002776
Product traceability