IRFI640GPBF
Power MOSFET, N Channel, 200 V, 9.8 A, 0.18 ohm, TO-220FP, Through Hole
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €2.320 |
| 10+ | €1.970 |
| 100+ | €1.420 |
| 500+ | €1.410 |
| 1000+ | €1.400 |
| 5000+ | €1.370 |
Product Information
Product Overview
The IRFI640GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
- Isolated package
- 2.5kVRMS (t = 60s, f = 60Hz) High voltage isolation
- 4.8mm Sink to lead creepage distance
- Dynamic dV/dt rating
- Low thermal resistance
Applications
Industrial, Power Management, Commercial
Technical Specifications
N Channel
9.8A
TO-220FP
10V
40W
150°C
-
Lead (07-Nov-2024)
200V
0.18ohm
Through Hole
4V
3Pins
-
-
Technical Docs (2)
Alternatives for IRFI640GPBF
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate