Print Page
SI4840BDY-T1-GE3
Power MOSFET, N Channel, 40 V, 19 A, 0.0074 ohm, NSOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
3.538 In Stock
Need more?
1-2 Working Days Delivery
Order before 17:00 standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 100+ | €0.914 |
| 500+ | €0.729 |
| 1000+ | €0.700 |
| 5000+ | €0.572 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
€96.40 (ex VAT)
A €5.00 re-reeling charge will be added for this product
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4840BDY-T1-GE3
Order Code2454807RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id19A
Drain Source On State Resistance0.0074ohm
On Resistance Rds(on)0.0074ohm
Transistor Case StyleNSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation6W
Power Dissipation Pd6W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCLead (21-Jan-2025)
Product Overview
The SI4840BDY-T1-GE3 is a 40VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for synchronous rectification, POL and IBC applications.
- 100% Rg tested
- 100% UIS tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0074ohm
Transistor Case Style
NSOIC
Rds(on) Test Voltage
10V
Power Dissipation
6W
No. of Pins
8Pins
Product Range
-
Automotive Qualification Standard
-
Channel Type
N Channel
Continuous Drain Current Id
19A
On Resistance Rds(on)
0.0074ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
6W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Alternatives for SI4840BDY-T1-GE3
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00033
Product traceability