BSS138Q-7-F

BSS138Q-7-F is a N-channel enhancement mode MOSFET. This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in system/load switch.

• Low on-resistance, low gate threshold voltage
• Low input capacitance, fast switching speed, low input/output leakage
• Drain-source voltage is 50V at TA=+25°C
• Continuous gate-source voltage is ±20V at TA=+25°C
• Continuous drain current is 200mA at TA=+25°C
• Pulsed drain current (10μs pulse duty cycle=1%) is 1A at TA=+25°C
• Power dissipation is 300mW at TA=+25°C
• Static drain-source on-resistance is 3.5ohm max at VGS=10V, ID=0.22A, TA=+25°C
• SOT23 case
• Operating and storage temperature range from -55 to +150°C

Warnungen und Hinweise

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