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SPD04N80C3ATMA1
Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoSPD04N80C3ATMA1
Order Code1664108RL
Also Known AsSPD04N80C3, SP001117768
Technical Datasheet
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | €0.923 |
| 500+ | €0.782 |
| 1000+ | €0.638 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
€97.30 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoSPD04N80C3ATMA1
Order Code1664108RL
Also Known AsSPD04N80C3, SP001117768
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id4A
Drain Source On State Resistance1.1ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation63W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
SPD04N80C3ATMA1 is a CoolMOS™ power transistor. It is designed for industrial applications with high DC bulk voltage, and switching applications ( i.e. active clamp forward ). Potential applications are consumer, PC power, adapter, lighting, and solar.
- New revolutionary high voltage technology
- Extreme dv/dt rated, high peak current capability
- Fully qualified according to JEDEC for industrial applications
- Ultra low gate charge, ultra low effective capacitances
- High efficiency and power density, outstanding cost/performance
- High reliability, ease-of-use
- Drain-source breakdown voltage is 800V at VGS=0V, I D=250µA
- Drain-source on-state resistance is 1.3ohm at VGS=10V, I D=2.5A, Tj=25°C
- Gate charge total is 23nC typ at VDD=640V, ID=4A, VGS=0 to 10V
- PG-TO252-3 package, operating and storage temperature range from -55 to 150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
63W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
1.1ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003
Product traceability