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UMX1NTN
Bipolar Transistor Array, Dual, Dual NPN, 50 V, 150 mA, 150 mW
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3.755 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | €0.409 |
| 10+ | €0.250 |
| 100+ | €0.159 |
| 500+ | €0.109 |
| 1000+ | €0.0867 |
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Multiple: 5
€2.04 (ex VAT)
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Product Information
ManufacturerROHM
Manufacturer Part NoUMX1NTN
Order Code1680410
Technical Datasheet
Transistor PolarityDual NPN
Collector Emitter Voltage Max NPN50V
Collector Emitter Voltage Max PNP-
Continuous Collector Current NPN150mA
Continuous Collector Current PNP-
Power Dissipation NPN150mW
Power Dissipation PNP-
DC Current Gain hFE Min NPN120hFE
DC Current Gain hFE Min PNP-
Transistor Case StyleSOT-363
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN180MHz
Transition Frequency PNP-
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
Product Overview
The UMX1NTN is a dual NPN general purpose amplification Bipolar Transistor with epitaxial planar type NPN silicon structure. The device integrating two transistors is available in ultra-compact package, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators and driver ICs.
- Ultra-compact complex digital transistor
- Potential divider type
- Small surface-mount package
- Transistor elements are independent, eliminating interference
Applications
Motor Drive & Control, Communications & Networking, Portable Devices, Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Dual NPN
Collector Emitter Voltage Max PNP
-
Continuous Collector Current PNP
-
Power Dissipation PNP
-
DC Current Gain hFE Min PNP
-
No. of Pins
6Pins
Operating Temperature Max
150°C
Transition Frequency PNP
-
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Collector Emitter Voltage Max NPN
50V
Continuous Collector Current NPN
150mA
Power Dissipation NPN
150mW
DC Current Gain hFE Min NPN
120hFE
Transistor Case Style
SOT-363
Transistor Mounting
Surface Mount
Transition Frequency NPN
180MHz
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000136
Product traceability