Ihr Bedarf geht darüber hinaus?
Menge | |
---|---|
1+ | € 1,250 |
10+ | € 1,210 |
25+ | € 1,180 |
50+ | € 1,140 |
100+ | € 1,110 |
250+ | € 1,070 |
500+ | € 1,040 |
1000+ | € 1,000 |
Produktspezifikationen
Produktbeschreibung
The L6387ED is a simple and compact high voltage Gate Driver manufactured with the BCD™ offline technology and able to drive a half-bridge of power MOS or IGBT device. The high-side (floating) section is enabled to work with voltage rail up to 600V. Both device outputs can independently sink and source 650 and 400mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. The L6387E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The L6387E features the UVLO protection on the VCC supply voltage and integrates the bootstrap diode, allowing a more compact and reliable solution.
- CMOS/TTL Schmitt-trigger inputs with hysteresis and pull-down
- Internal bootstrap diode structure
- Outputs in phase with inputs
- Interlocking function
- dV/dt immunity of ±50V/ns in full temperature range
- 50/30ns Rise/fall with 1nF load switching time
Anwendungen
Unterhaltungselektronik, HLK, Motorantrieb & -steuerung, Industrie, Beleuchtung, Gebäudeautomatisierung, Power-Management
Warnungen und Hinweise
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technische Spezifikationen
2Kanäle
High-Side und Low-Side
8Pin(s)
Oberflächenmontage
400mA
5.5V
-45°C
110ns
-
No SVHC (21-Jan-2025)
-
IGBT, MOSFET
SOIC
Invertierend
650mA
17V
125°C
105ns
-
Technische Dokumente (3)
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Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:Malaysia
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
RoHS
Produkt-Konformitätszertifikat