DMG301NU-13

DMG301NU-13 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include DC-DC converters, power management functions, battery-operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.

• Low on-resistance, low gate threshold voltage
• Low input capacitance, fast switching speed
• Small surface mount package, ESD protected gate (>6kV human body model)
• Drain-source voltage is 25V at TA=+25°C
• Gate-source voltage is 8V at TA=+25°C
• Pulsed drain current (10µS pulse, duty cycle=1%) is 1.5A at TA=+25°C
• Maximum body diode forward current is 0.5A at TA=+25°C
• Total power dissipation is 0.32W
• SOT23 case
• Operating and storage temperature range from -55 to +150°C

Warnungen und Hinweise

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