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Menge | |
---|---|
1+ | € 1,130 |
10+ | € 0,821 |
50+ | € 0,742 |
100+ | € 0,604 |
250+ | € 0,567 |
500+ | € 0,544 |
1000+ | € 0,505 |
2500+ | € 0,486 |
Produktspezifikationen
Produktbeschreibung
2EDL05N06PFXUMA1 is a 600V half-bridge gate driver with an integrated bootstrap diode. The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3V. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V. Additionally, the offline clamping function provides inherent protection of the parasitic turn-on by floating gate conditions when IC is not supplied. The application includes motor drives, general purpose inverters, refrigeration compressors, home appliances, half-bridge and full-bridge converters in offline AC-DC power supplies for telecom and lighting.
- Infineon thin-film-SOI-technology, fully operational to +600V
- Floating channel designed for bootstrap operation, dV/dt immune ±50V
- Integrated ultra-fast, low RDS(ON) bootstrap diode
- Gate drive supply range from 10V to 20V, undervoltage lockout for both channels
- 3.3V, 5V and 15V input logic compatible
- Input bias current is 35µA typical at (VLIN = 3.3V)
- Bootstrap diode resistance is 36 ohm typical at (VF1 = 4V, VF2 = 5V)
- Turn-on rise time is 48ns typical at (VLIN/HIN = 0 or 3.3V, CL = 1nF)
- Turn-off fall time is 37ns typical at (VLIN/HIN = 0 or 3.3V, CL = 1nF)
- Ambient temperature range from -40°C to 125°C, DSO-8 package
Technische Spezifikationen
2Kanäle
Halbbrücke
8Pin(s)
Oberflächenmontage
-A
10V
-40°C
310ns
2EDL05
MSL 3 - 168 Stunden
-
MOSFET
DSO
Nicht invertierend
-A
17.5V
95°C
300ns
-
No SVHC (21-Jan-2025)
Technische Dokumente (1)
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Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:Malaysia
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
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RoHS
Produkt-Konformitätszertifikat