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Menge | |
---|---|
1+ | € 2,480 |
10+ | € 1,870 |
25+ | € 1,710 |
50+ | € 1,630 |
100+ | € 1,540 |
250+ | € 1,450 |
Produktspezifikationen
Produktbeschreibung
MPQ1925 is a high-frequency, N-channel MOSFET, half-bridge gate driver. The device’s low-side MOSFET (LS-FET) and high-side MOSFET (HS-FET) driver channels are independently controlled, and are matched with less than 5ns in time delay. In the case of an insufficient supply, the device’s HS-FET and LS-FET under-voltage lockout (UVLO) protection forces the outputs low. The MPQ1925 also features an integrated bootstrap (BST) diode to reduce the external component count. The MPQ1925 is available in a QFN-8 (4mmx4mm) package. Applications include motor drivers, telecommunication half-bridge power supplies, avionics DC/DC converters, two-switch forward converters, active-clamp forward converters.
- Drives an N-channel MOSFET half-bridge
- 115V bootstrap voltage (VBST) range, on-chip bootstrap (BST) diode
- Typical 20ns propagation delay, <lt/>5ns gate driver matching time
- Drives a 2.2nF load with a 15ns rise time and 10ns fall time at 12V VDD
- Transistor-to-transistor logic (TTL) compatible input
- <lt/>150µA quiescent current (IQ)
- High-side MOSFET (HS-FET) and low side MOSFET (LS-FET) undervoltage lockout (UVLO) protection
Hinweise
MPS part numbers ending in "-P" and "-Z" are the same parts. P & Z only indicates reel size.
Technische Spezifikationen
1Kanäle
Halbbrücke
8Pin(s)
Oberflächenmontage
4.7A
8V
-40°C
20ns
-
No SVHC (19-Jan-2021)
-
MOSFET
QFN-EP
TTL
6A
15V
150°C
20ns
-
Technische Dokumente (1)
Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:China
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
RoHS
Produkt-Konformitätszertifikat