TBD62183AFNG(Z,EL)

TBD62183AFNG(Z,EL) is a TBD62183A series BiCD silicon monolithic integrated circuit. It has a clamp diode for switching inductive loads built-in in each output.

• 8 channel sink type DMOS transistor array
• High voltage is 50V (max, Ta = 25°C), high current is 50mA/ch (max, Ta = 25°C)
• Input voltage range from 2.8 to 25V (output on, Ta = -40 to 85°C, IOUT = 45mA, VOUT = 2V)
• COMMON pin voltage is 50V (max, Ta = -40 to 85°C)
• Clamp diode forward voltage is 45mA (max, Ta = -40 to 85°C)
• Output leakage current is 1.0μA (max, Ta = 25°C)
• Turn on delay is 0.2μs (typ, VOUT = 50V, RL = 1Kohm, CL = 15pF)
• Turn off delay is 0.4μs (typ, VOUT = 50V, RL = 1Kohm, CL = 15pF)
• SSOP18-P-225-0.65 package, operating temperature range from -40 to 85°C

Hinweise

Please be careful about thermal conditions during use.