CGD15HB62P1

The CGD15HB62P1 is a two channel gate driver board for 1200V SiC MOSFET power modules. Each of the two gate drive channels is protected by a desaturation circuit. In the event of a short circuit, the voltage across the MOSFET (VDS) rises until it hits a threshold which causes the desaturation circuit to drive both gate drive channels to their off state. For used with CAS300M12BM2, 1200V, 300A module and CAS120M12BM2, 1200V, 120A module. It is used in driver for SiC MOSFET modules in industrial applications and DC Bus voltage up to 1000V.

• 2 output channels
• 16V integrated isolated power supply
• Direct mount low inductance design
• Short circuit protection
• Half bridge topology
• Under voltage protection
• 1200V isolation voltage, 20 pins interface & 9A output peak current
• 50KV/µs Dv/Dt, 64KHz maximum switching frequency
• 44g weight
• Operating temperature range from -35°C to 85°C

Anwendungen

Power-Management