Siliziumkarbid (SiC)-MOSFET & -Module

Angewandte(r) Filter

Drain-Source-Durchgangswiderstand

0.02ohm

1 Ausgewählte(r) Filter

			Preiseinheit		Menge

G3R20MT17N	3598626 Data Sheet RoHS	GENESIC Siliziumkarbid-MOSFET Eins n-Kanal 100 A 1.7 kV 0.02 ohm SOT-227	Stück	1+ € 109,600	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	100A	1.7kV	0.02ohm	-	SOT-227	4Pin(s)	15V	2.7V	-	523W	175°C	G3R
SCTW100N65G2AG	3387273 Data Sheet RoHS Date/Lot Code	STMICROELECTRONICS Siliziumkarbid-MOSFET Eins n-Kanal 100 A 650 V 0.02 ohm TO-247	Stück	1+ € 41,570 5+ € 36,370 10+ € 30,140 50+ € 27,020 100+ € 24,940	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	100A	650V	0.02ohm	-	TO-247	3Pin(s)	18V	3.1V	-	420W	200°C	-
G3R20MT12N	3598658 Data Sheet RoHS	GENESIC Siliziumkarbid-MOSFET Eins n-Kanal 105 A 1.2 kV 0.02 ohm SOT-227	Stück	1+ € 53,640 5+ € 51,540 10+ € 49,430 50+ € 48,260	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	105A	1.2kV	0.02ohm	-	SOT-227	4Pin(s)	15V	2.69V	-	365W	175°C	G3R
NVBG020N120SC1	3265484 Data Sheet RoHS Date/Lot Code	ONSEMI Siliziumkarbid-MOSFET EliteSiC Eins n-Kanal 98 A 1.2 kV 0.02 ohm TO-263 (D2PAK)	Stück (Gurtabschnitt) Gurtabschnitte	1+ € 46,500 5+ € 41,850 10+ € 36,330 50+ € 36,320	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	98A	1.2kV	0.02ohm	-	TO-263 (D2PAK)	7Pin(s)	20V	2.7V	-	468W	175°C	EliteSiC Series
NTHL020N120SC1	3367855 Data Sheet RoHS Date/Lot Code	ONSEMI Siliziumkarbid-MOSFET EliteSiC Eins n-Kanal 103 A 1.2 kV 0.02 ohm TO-247	Stück	1+ € 25,250 5+ € 25,020 10+ € 24,780 50+ € 22,710 100+ € 22,260	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	103A	1.2kV	0.02ohm	-	TO-247	3Pin(s)	20V	2.7V	-	535W	175°C	EliteSiC Series
NTHL020N090SC1	3367854 Data Sheet RoHS Date/Lot Code	ONSEMI Siliziumkarbid-MOSFET EliteSiC Eins n-Kanal 118 A 900 V 0.02 ohm TO-247	Stück	1+ € 26,710 5+ € 25,370 10+ € 24,910 50+ € 16,610 100+ € 16,280	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	118A	900V	0.02ohm	-	TO-247	3Pin(s)	15V	2.7V	-	503W	175°C	EliteSiC Series
NTBG020N090SC1	3367849 Data Sheet RoHS Date/Lot Code	ONSEMI Siliziumkarbid-MOSFET EliteSiC Eins n-Kanal 112 A 900 V 0.02 ohm TO-263 (D2PAK)	Stück (Gurtabschnitt) Gurtabschnitte	1+ € 24,130 10+ € 20,570 50+ € 19,450 100+ € 18,920 250+ € 18,900	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	112A	900V	0.02ohm	-	TO-263 (D2PAK)	7Pin(s)	15V	2.6V	-	477W	175°C	EliteSiC Series
NTBG020N120SC1	3367851 Data Sheet RoHS Date/Lot Code	ONSEMI Siliziumkarbid-MOSFET EliteSiC Eins n-Kanal 98 A 1.2 kV 0.02 ohm TO-263 (D2PAK)	Stück (Gurtabschnitt) Gurtabschnitte	1+ € 32,740 5+ € 30,140 10+ € 27,540 50+ € 26,990 100+ € 26,440	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	98A	1.2kV	0.02ohm	-	TO-263 (D2PAK)	7Pin(s)	20V	2.7V	-	468W	175°C	EliteSiC Series
NVBG020N090SC1	3367862 Data Sheet RoHS Date/Lot Code	ONSEMI Siliziumkarbid-MOSFET EliteSiC Eins n-Kanal 112 A 900 V 0.02 ohm TO-263 (D2PAK)	Stück (Gurtabschnitt) Gurtabschnitte	1+ € 33,560 5+ € 31,880 10+ € 25,600 50+ € 25,290 100+ € 24,970	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	112A	900V	0.02ohm	-	TO-263 (D2PAK)	7Pin(s)	15V	2.6V	-	477W	175°C	EliteSiC Series
NXH020F120MNF1PTG	3929798 Data Sheet RoHS Date/Lot Code	ONSEMI Siliziumkarbid-MOSFET FourPack Vierfach n-Kanal 51 A 1.2 kV 0.02 ohm Modul	Stück	1+ € 149,260 5+ € 141,660 10+ € 134,060	Min.: 1 / Mult.: 1	FourPack	Vierfach n-Kanal	-	51A	1.2kV	0.02ohm	-	Modul	22Pin(s)	20V	2.81V	-	119W	175°C	-
NVH4L020N120SC1	3464022 Data Sheet RoHS Date/Lot Code	ONSEMI Siliziumkarbid-MOSFET EliteSiC Eins n-Kanal 102 A 1.2 kV 0.02 ohm TO-247	Stück	1+ € 41,880 5+ € 41,810 10+ € 41,730 50+ € 33,600	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	102A	1.2kV	0.02ohm	-	TO-247	4Pin(s)	20V	2.7V	-	510W	175°C	EliteSiC Series
NTH4L020N120SC1	3464002 Data Sheet RoHS Date/Lot Code	ONSEMI Siliziumkarbid-MOSFET EliteSiC Eins n-Kanal 102 A 1.2 kV 0.02 ohm TO-247	Stück	1+ € 25,900 5+ € 23,830 10+ € 22,440 50+ € 21,040 100+ € 20,620	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	102A	1.2kV	0.02ohm	-	TO-247	4Pin(s)	20V	2.7V	-	510W	175°C	EliteSiC Series
NVBG020N120SC1	3265484RL Data Sheet RoHS Date/Lot Code	ONSEMI Siliziumkarbid-MOSFET EliteSiC Eins n-Kanal 98 A 1.2 kV 0.02 ohm TO-263 (D2PAK)	Stück (Gurtabschnitt) Re-Reeling Verpackungsoptionen	10+ € 36,330 50+ € 36,320	Min.: 10 / Mult.: 1	Eins	n-Kanal	n-Kanal	98A	1.2kV	0.02ohm	0.02ohm	TO-263 (D2PAK)	7Pin(s)	20V	2.7V	468W	468W	175°C	EliteSiC Series
NTBG020N120SC1	3367851RL Data Sheet RoHS Date/Lot Code	ONSEMI Siliziumkarbid-MOSFET EliteSiC Eins n-Kanal 98 A 1.2 kV 0.02 ohm TO-263 (D2PAK)	Stück (Gurtabschnitt) Re-Reeling Verpackungsoptionen	10+ € 27,540 50+ € 26,990 100+ € 26,440	Min.: 10 / Mult.: 1	Eins	n-Kanal	-	98A	1.2kV	0.02ohm	-	TO-263 (D2PAK)	7Pin(s)	20V	2.7V	-	468W	175°C	EliteSiC Series
NVBG020N090SC1	3367862RL Data Sheet RoHS Date/Lot Code	ONSEMI Siliziumkarbid-MOSFET EliteSiC Eins n-Kanal 112 A 900 V 0.02 ohm TO-263 (D2PAK)	Stück (Gurtabschnitt) Re-Reeling Verpackungsoptionen	10+ € 25,600 50+ € 25,290 100+ € 24,970	Min.: 10 / Mult.: 1	Eins	n-Kanal	-	112A	900V	0.02ohm	-	TO-263 (D2PAK)	7Pin(s)	15V	2.6V	-	477W	175°C	EliteSiC Series
NTBG020N090SC1	3367849RL Data Sheet RoHS Date/Lot Code	ONSEMI Siliziumkarbid-MOSFET EliteSiC Eins n-Kanal 112 A 900 V 0.02 ohm TO-263 (D2PAK)	Stück (Gurtabschnitt) Re-Reeling Verpackungsoptionen	10+ € 20,570 50+ € 19,450 100+ € 18,920 250+ € 18,900	Min.: 10 / Mult.: 1	Eins	n-Kanal	-	112A	900V	0.02ohm	-	TO-263 (D2PAK)	7Pin(s)	15V	2.6V	-	477W	175°C	EliteSiC Series
NXH020P120MNF1PTG	3973632 Data Sheet RoHS Date/Lot Code	ONSEMI Siliziumkarbid-MOSFET Halbbrücke Zweifach n-Kanal 51 A 1.2 kV 0.02 ohm Modul	Stück	1+ € 117,300 5+ € 108,730 10+ € 100,160	Min.: 1 / Mult.: 1	Halbbrücke	Zweifach n-Kanal	-	51A	1.2kV	0.02ohm	-	Modul	18Pin(s)	20V	2.81V	-	119W	175°C	-
SCT015W120G3-4AG	4538744 Data Sheet RoHS Date/Lot Code	STMICROELECTRONICS Siliziumkarbid-MOSFET AEC-Q101 Eins n-Kanal 129 A 1.2 kV 0.02 ohm HiP247	Stück	1+ € 36,010 5+ € 33,700 10+ € 31,040 50+ € 28,480 100+ € 27,350	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	129A	1.2kV	0.02ohm	-	HiP247	4Pin(s)	18V	4.2V	-	673W	200°C	-
DIF065SIC020	4552615 Data Sheet RoHS	DIOTEC Siliziumkarbid-MOSFET Eins n-Kanal 150 A 650 V 0.02 ohm TO-247	Stück	1+ € 80,540 5+ € 71,760 10+ € 62,970 50+ € 61,710 100+ € 60,450	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	150A	650V	0.02ohm	-	TO-247	4Pin(s)	18V	4V	-	550W	175°C	-
NTH4L013N120M3S	4472907 Data Sheet RoHS Date/Lot Code	ONSEMI Siliziumkarbid-MOSFET EliteSiC Eins n-Kanal 151 A 1.2 kV 0.02 ohm TO-247	Stück	1+ € 30,320 5+ € 29,470 10+ € 28,620 50+ € 24,310 100+ € 23,820	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	151A	1.2kV	0.02ohm	-	TO-247	4Pin(s)	18V	4.4V	-	682W	175°C	EliteSiC Series
SCTH100N65G2-7AG	3387270 Data Sheet RoHS Date/Lot Code	STMICROELECTRONICS Siliziumkarbid-MOSFET Eins n-Kanal 95 A 650 V 0.02 ohm H2PAK	Stück (Gurtabschnitt) Gurtabschnitte	1+ € 25,290 5+ € 22,710 10+ € 20,130 50+ € 20,120 100+ € 18,350	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	95A	650V	0.02ohm	-	H2PAK	7Pin(s)	18V	3.1V	-	360W	175°C	-
SCTH100N65G2-7AG	3387270RL Data Sheet RoHS Date/Lot Code	STMICROELECTRONICS Siliziumkarbid-MOSFET Eins n-Kanal 95 A 650 V 0.02 ohm H2PAK	Stück (Gurtabschnitt) Re-Reeling Verpackungsoptionen	10+ € 20,130 50+ € 20,120 100+ € 18,350	Min.: 10 / Mult.: 1	Eins	n-Kanal	-	95A	650V	0.02ohm	-	H2PAK	7Pin(s)	18V	3.1V	-	360W	175°C	-
G3R20MT12K	3598646 Data Sheet RoHS	GENESIC Siliziumkarbid-MOSFET Eins n-Kanal 128 A 1.2 kV 0.02 ohm TO-247	Stück	1+ € 34,380 5+ € 33,000 10+ € 31,620 50+ € 30,580 100+ € 29,970	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	128A	1.2kV	0.02ohm	-	TO-247	4Pin(s)	15V	2.69V	-	542W	175°C	G3R
G3R20MT17K	3598657 Data Sheet RoHS	GENESIC Siliziumkarbid-MOSFET Eins n-Kanal 124 A 1.7 kV 0.02 ohm TO-247	Stück	1+ € 102,160 5+ € 97,070 10+ € 91,970	Min.: 1 / Mult.: 1	Eins	n-Kanal	-	124A	1.7kV	0.02ohm	-	TO-247	4Pin(s)	15V	2.7V	-	809W	175°C	G3R
NVHL020N090SC1	3367865 Data Sheet RoHS Date/Lot Code	ONSEMI Siliziumkarbid-MOSFET EliteSiC Eins n-Kanal 118 A 900 V 0.02 ohm TO-247	Stück	450+ € 20,720	Min.: 450 / Mult.: 450	Eins	n-Kanal	-	118A	900V	0.02ohm	-	TO-247	3Pin(s)	15V	2.7V	-	503W	175°C	EliteSiC Series